September 5, 1993
Author(s)
H. W. Tseng, John A. Dagata, Richard M. Silver, Joseph Fu, J R. Lowney
Scanning tunneling microscopy (STM) and atomic force microscopy operating in air have been used to investigate locations of molecular-beam epitaxially grown GaAs multiple pn junctions cleaved and passivated with P(2)S(5). Symmetrically and asymmetrically