Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Search Publications by: Joseph Woicik (Fed)

Search Title, Abstract, Conference, Citation, Keyword or Author
Displaying 126 - 150 of 218

Domain Ordering of Strained 5ML SrTiO 3 Films on Si(001)

June 26, 2007
Author(s)
P Ryan, Joseph Woicik, D Wermeille, J.-W Kim, C S. Hellberg, H Li
We present high resolution X-ray diffraction data indicating regularly ordered square shaped coherent domains approximately 1200A in length co-existing with longer approximately 9500A correlated regions in a highly strained 5ML SrTiO3 (STO) film grown on

Ferroelectric Distortion in SrTiO3 Thin Films on Si(001) by X-Ray Absorption Fine Structure: Experiment and First-Principles Calculations

April 23, 2007
Author(s)
Joseph C. Woicik, Eric L. Shirley, C S. Hellberg, S Sambasivan, Daniel A. Fischer, B D. Chapman, E A. Stern, P Ryan, D L. Ederer, H Li
Ti K and Ti L2,3 edge x-ray absorption fine-structure near-edge spectra of SrTiO3 thin films grown coherently on Si(001) reveal the presence of a ferroelectric (FE) distortion at room temperature. This unique phase is a direct consequence of the

Enhancement of Engine Oil Wear and Friction Control Performance Through Titanium Additive Chemistry

February 27, 2007
Author(s)
J M. Guevremont, G H. Guinther, D Szemenyei, Mark Devlin, T-C Jao, Cherno Jaye, Joseph Woicik, Daniel A. Fischer
Traditionally, wear protection and friction modification by engine oil are provided by zinc dithiophosphate (ZDDP) or other phosphorus compounds. These additives provide effective wear protection and friction control on engine parts through formation of a

The Influence of NH 3 Anneal on the Crystallization Kinetics of HfO 2 Gate Dielectric Films

November 17, 2006
Author(s)
Patrick S. Lysaght, Joseph Woicik, Brendan Foran, Joel Barnett, Gennadi Bersuker, B H. Lee
HfO2 gate dielectric thin films have been exposed to anneal processing in NH3 and N2 ambient in order to decouple the influence of N incorporation from that of the thermal cycle alone. We report on the effectiveness of NH3 processing to introduce N into
Was this page helpful?