July 14, 2013
Author(s)
Sanghee Cho, Stephen D. Kang, Wondong Kim, Eui-Sup Lee, Sung-Jae Woo, Ki-Jeong Kong, Ilyou Kim, Hyeong-Do Kim, Tong Zhang, Joseph A. Stroscio, Yong-Hyun Kim, Ho-Ki Lyeo
Many structural defects and strain fields develop during the preparation of thin films and nanostructures, with their origins being at the atomic level1,2. Sensitively detecting these subtle features with high sensitivity and resolution, and their