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Search Publications by: Mark D. Stiles (Fed)

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Displaying 376 - 383 of 383

Electron Transmission Through NiSi 2 -Si Interfaces

January 1, 1989
Author(s)
Mark D. Stiles, D Hamann
Calculations of electron transmission through epitaxial NiSi 2/Si(111) interfaces illustrate the versatality of a newloy developed first-principles technique. The transmission is poor and very dependent on the interface structure; of the electrons of

Coercivities Above 10 kOe in CoPd Superlattices

Author(s)
William F. Egelhoff Jr., Cedric J. Powell, L Gan, P J. Chen, H Ettedgui, D Tirosh, Robert D. McMichael, Mark D. Stiles, J Mallett, Alexander J. Shapiro, John E. Bonevich, J H. Judy, Erik B. Svedberg, A. E. Berkowitz
We have achieved excellent grain isolation in CoPd superlattices by using 10 nm Au as both an underlayer and an overlayer and diffusing Au into the grain boundaries by annealing for {approximately equal to} 30 min. at 300 degrees C. The grain isolation

Suppressing of Unidirectional Coupling in Magnetic Tunnel Junctions by Preoxidation: Structural Studies

Author(s)
William F. Egelhoff Jr., Robert D. McMichael, Mark D. Stiles, Cedric J. Powell, John E. Bonevich, M Wormington, D S. Eastwood, B K. Tanner
Pre-oxidation of the bottom electrode prior to deposition of Al_{2}O_{3} or MgO is very effective as a general approach to suppressing the unidirectional coupling that is commonly observed in magnetic tunnel junctions. In this paper, we report structural