Stiles, M.
and Hamann, D.
(1989),
Electron Transmission Through NiSi<sub>2</sub>-Si Interfaces, Physical Review B (Condensed Matter and Materials Physics)
(Accessed April 18, 2025)
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Electron Transmission Through NiSi2-Si Interfaces
Published
Author(s)
, D Hamann
Abstract
Calculations of electron transmission through epitaxial NiSi2/Si(111) interfaces illustrate the versatality of a newloy developed first-principles technique. The transmission is poor and very dependent on the interface structure; of the electrons of primary importance for transport, more than 50% are reflected by the type-A orientation interface and more than 80% by the type B.Citation
Physical Review B (Condensed Matter and Materials Physics)
Volume
40
Issue
2
Pub Type
Journals
Citation
Issues
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Created January 1, 1989, Updated February 19, 2017