Stiles, M.
and Hamann, D.
(1989),
Electron Transmission Through NiSi<sub>2</sub>-Si Interfaces, Physical Review B (Condensed Matter and Materials Physics)
(Accessed May 5, 2025)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Electron Transmission Through NiSi2-Si Interfaces
Published
Author(s)
, D Hamann
Abstract
Calculations of electron transmission through epitaxial NiSi2/Si(111) interfaces illustrate the versatality of a newloy developed first-principles technique. The transmission is poor and very dependent on the interface structure; of the electrons of primary importance for transport, more than 50% are reflected by the type-A orientation interface and more than 80% by the type B.Citation
Physical Review B (Condensed Matter and Materials Physics)
Volume
40
Issue
2
Pub Type
Journals
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created January 1, 1989, Updated February 19, 2017