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Electron Transmission Through NiSi2-Si Interfaces

Published

Author(s)

Mark D. Stiles, D Hamann

Abstract

Calculations of electron transmission through epitaxial NiSi2/Si(111) interfaces illustrate the versatality of a newloy developed first-principles technique. The transmission is poor and very dependent on the interface structure; of the electrons of primary importance for transport, more than 50% are reflected by the type-A orientation interface and more than 80% by the type B.
Citation
Physical Review B (Condensed Matter and Materials Physics)
Volume
40
Issue
2

Citation

Stiles, M. and Hamann, D. (1989), Electron Transmission Through NiSi<sub>2</sub>-Si Interfaces, Physical Review B (Condensed Matter and Materials Physics) (Accessed June 21, 2024)

Issues

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Created January 1, 1989, Updated February 19, 2017