April 11, 2011
Author(s)
Jason Ryan, Liangchun (. Yu, Jae Han, Joseph J. Kopanski, Kin Cheung, Fei Zhang, Chen Wang, Jason Campbell, John S. Suehle, Viniyak Tilak, Jody Fronheiser
A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long standing