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Displaying 776 - 800 of 1414

Reliability and Performance Limitations in SiC Power Devices

December 27, 2005
Author(s)
Ranbir Singh, Allen R. Hefner Jr.
Despite Silicon Carbide's (SiC's) high breakdown electric field, high thermal conductivity and wide bandgap, it faces certain reliability challenges when used to make conventional power device structures like power MOS-based devices, bipolar-mode diodes

Electromagnetic Signatures of WLAN Cards and Network Security

December 21, 2005
Author(s)
Catherine A. Remley, Chriss A. Grosvenor, Robert T. Johnk, David R. Novotny, Paul D. Hale, Michael McKinley, Emmanouil Antonakakis, A Karygiannis
The proliferation of wireless devices and the availability of new wireless applications and services raise new privacy and security concerns. Although network-layer anonymity protects the identities of the communication endpoints, the physical layer of

INTER-LABORATORY COMPARISON OF NOISE-PARAMETER MEASUREMENTS ON CMOS DEVICES WITH 0.12 um GATE LENGTH

December 1, 2005
Author(s)
James P. Randa, Susan L. Sweeney, Tom McKay, Dave K. Walker, David R. Greenberg, Jon Tao, Judah Mendez, G. Ali Rezvani, John J. Pekarik
We present results of an interlaboratory comparison of S-parameter and noise-parameter measurements performed on 0.12 υm gate-length CMOS transistors. Copies of the same device were measured at three different laboratories (IBM, NIST, RFMD), and the

Comparison of Gains Determined from the Extrapolation and Pattern Integration Methods

October 30, 2005
Author(s)
Michael H. Francis, Katherine MacReynolds, Jeffrey R. Guerrieri
Scientists at the National Institute of Standards (NIST) have measured the gain of several antennas using two different methods. The first method is the three-antenna extrapolation method developed at NIST in the early 1970s. The second method is the

Characterization of Normally-off SiC Vertical JFET Devices and Inverter Circuits

October 1, 2005
Author(s)
Jih-Sheng Lai, H. Yu, J. Zhang, Y. Li, Kuang Sheng, J.H. Zhao, Allen R. Hefner Jr.
A normally-off SiC JFETs has been characterized under static and dynamic operating conditions. Two application oriented inverter circuits were constructed for additional tests under soft- and hard-switching conditions. The single-phase soft-switching

Electrical Methods for Mechanical Characterization of Interconnect Thin Films

September 1, 2005
Author(s)
Robert Keller, Cynthia A. Volkert, Roy H. Geiss, Andrew Slifka, David T. Read, Nicholas Barbosa, Reiner Monig
We describe the use of electrical methods for evaluating mechanical reliability and properties of patterned copper and aluminum interconnects on silicon substrates. The approach makes use of controlled Joule heating, which causes thermal strains in the

GerberTranslator: Moving towards new PCB standards

August 29, 2005
Author(s)
Matthew L. Aronoff, John V. Messina
This paper describes the key features of the NIST-developed software tool called ?GerberTranslator?. GerberTranslator is a software translator which automates the majority of the work in converting a printed circuit board (PCB) described in the industry

Uncertainties in Spherical Near-Field Antenna Measurements

August 3, 2005
Author(s)
Michael H. Francis, Ronald C. Wittmann, Jin-Seob Kang
A general approach is presented for estimating uncertainties in far-field parameters obtained from spherical near-field antenna measurements. The error is approximately bounded in terms of the uncertainty of the probe's receiving pattern and the

Workshop on Reliability Issues in Nanomaterials

August 1, 2005
Author(s)
Robert Keller, David T. Read, Roop L. Mahajan
The Workshop on Reliability Issues in Nanomaterials was held at the Boulder Laboratories of the National Institute of Standards and Technology (NIST) on August 17-19, 2004. It was designed to promote a particular subset of NIST?s responsibilities under the

A current-density scale for characterizing nonlinearity in high-Tc superconductors

June 1, 2005
Author(s)
Kenneth Leong, James C. Booth, Susan A. Schima
In this paper, we characterize microwave nonlinearity in a high temperature superconducting (HTS) thin film sample by measurement of a geometry-independent current-density scale j o. This quanity j specifies the strenth of a material-dependent nonlinearity
Displaying 776 - 800 of 1414
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