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Electronics

Semiconductors

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Displaying 1076 - 1100 of 1446

Optical Properties of Semiconductors

October 19, 2009
Author(s)
David G. Seiler, Stefan Zollner, Alain C. Diebold, Paul Amirtharaj
Rapid advances in semiconductor manufacturing and associated technologies have increased the need for optical characterization techniques for materials analysis and in-situ monitoring/control applications. Optical measurements have many unique and

Wafer-level Hall Measurement on SiC MOSFET

October 16, 2009
Author(s)
Liangchun (. Yu, Kin P. Cheung, Vinayak Tilak, Greg Dunne, Kevin Matocha, Jason P. Campbell, John S. Suehle, Kuang Sheng
Low channel mobility is one of the biggest challenges to commercializing SiC MOSFETs. Accurate mobility measurement is essential for understanding the mechanisms that lead to low mobility. The most widely used effective mobility measurements overestimate

Relative Photon-to-Carrier Efficiencies of Alternating Nanolayers of Zinc Phthalocyanine and C60 Multilayer Films Assessed by Time-Resolved Terahertz Spectroscopy

October 1, 2009
Author(s)
Okan Esenturk, Joseph S. Melinger, Paul A. Lane, Edwin J. Heilweil
Alternating multi-layer and 1:1 blended films of zinc phthalocyanine (ZnPc)and buckminsterfullerene (C60) were investigated as model active layers for solar cells by Time-Resolved Terahertz Spectroscopy (TRTS). Relative photon-to-carrier efficiencies 2

Photomask metrology using a 193 nm scatterfield microscope

September 30, 2009
Author(s)
Richard Quintanilha, Bryan M. Barnes, Martin Y. Sohn, Lowell P. Howard, Richard M. Silver, James E. Potzick, Michael T. Stocker
The current photomask linewidth Standard Reference Material (SRM) supplied by the National Institute of Standards and Technology (NIST), SRM 2059, is the fifth generation of such standards for mask metrology. The calibration of this mask has been usually

Unified Model for Bulk Acoustic Wave Resonators’ Nonlinear Effects

September 20, 2009
Author(s)
Eduard Rocas, Juan C. Collado Gomez, James C. Booth, Enrique Iborra, Robert Aigner
We present a nonlinear model for Bulk Acoustic Wave resonators that combines different sources of nonlinearity, using device-independent material specific parameters, to predict the intermodulation and harmonics generation. The actual model accounts for
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