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Mariona Coll Bau, Curt A. Richter, Christina A. Hacker
We present the results of an IR study of the effect of temperature on the formation of Au-monolayer-Si molecular junctions by using a flip-chip lamination approach. Carboxylic acid-terminated alkanethiols self-assembled on ultrasmooth gold substrate have
The National Institute of Standards and Technology (NIST) has deployed Reference Material (RM) scaffolds for tissue engineering: a series of well-characterized 3D tissue scaffolds with differing porosities (RM 8395, RM 8396 and RM 8397) (Fig. 1). Customers
ABSTRACT: We studied the complex conductivity of regio-regular poly(3-hexylthiophene) (P3HT) in the temperature range between 193K to 333 K (-80 C to 60 C) and in the frequency range from the direct current (DC) to 12 GHz. The identified relaxation process
Brad Conrad, Calvin Chan, Marsha A. Loth, John E. Anthony, David J. Gundlach
Organic semiconductors remain an active subject for device physics and material science because of their varied electrical properties and potential for low-cost, high-throughput roll-to-roll processing. Several high-mobility oligomers, such as pentacene
Lawrence P. Cook, Richard E. Cavicchi, Nabil Bassim, Susie Eustis, Winnie Wong-Ng, Igor Levin, Ursula R. Kattner, Carelyn E. Campbell, Christopher B. Montgomery, William F. Egelhoff Jr., Mark D. Vaudin
We have investigated multilayer and bilayer Ni/Si thin films by nano-differential scanning calorimetry (DSC) at ultra rapid scan rates, in a temperature-time regime not accessible with conventional apparatus. DSC experiments were completed at slower scan
Ravi Kummamuru, Lito De La Rama, Liang Hu, Mark D. Vaudin, Mikhail Efremov, Martin L. Green, David A. LaVan, Leslie Allen
We present characterization of energetics of the reaction between nickel and silicon thin films using differential scanning nano-calorimetry (nano-DSC). For the first time, nano-DSC measurements up to 850 °C and of enthalpy of thin film reactions have been
Donald A. Windover, David L. Gil, Albert Henins, James P. Cline
NIST recently released a standard reference material (SRM) for the calibration of high resolution X-ray diffraction (HRXRD) instruments. HRXRD is extensively used in the characterization of lattice distortion in thin single, epitaxial crystal layers on
P.E. Thompson, G.G. Jernigan, David S. Simons, P. Chi, B.T. Jonker, O.M.J. van 't Erve
P doping of Si during growth by molecular beam epitaxy (MBE) has been investigated in the temperature regime 700 oC to 870 oC. By designing a growth sequence that fully accounts for the P deposited in a delta-doped layer, and then tracks the P as it
Liangchun (. Yu, Kin P. Cheung, Vinayak Tilak, Greg Dunne, Kevin Matocha, Jason P. Campbell, Kuang Sheng
Mobility is a good indicator of device reliability. High channel mobility is one of the biggest challenges especially in novel devices such as high-k based MOSFET, III-V devices and SiC power MOSFET etc. Accurate measurement of channel mobility is required
Diana N. Zeiger, Christopher Stafford, Yajun Cheng, Stefan D. Leigh, Sheng Lin-Gibson, Nancy Lin
Characterization of materials developed for medical usage frequently includes studies in which the materials are inoculated with bacteria in order to assess biofilm formation. Differences in the bacteria are considered to be due to the material alone; the
David G. Seiler, Stefan Zollner, Alain C. Diebold, Paul Amirtharaj
Rapid advances in semiconductor manufacturing and associated technologies have increased the need for optical characterization techniques for materials analysis and in-situ monitoring/control applications. Optical measurements have many unique and