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Seam-Free Fabrication of Sub-Micrometer Copper Interconnects by Iodine-Catalyzed Chemical Vapor Deposition

Published

Author(s)

S G. Pyo, S D. Kim, Daniel Wheeler, Thomas P. Moffat, Daniel Josell

Abstract

Kinetic parameters from studies of deposition on planar deposits are used to predict superconformal filling of fine features during iodine-catalyzed chemical vapordeposition. The mechanism behind the superconformal filling is described and the metrology required to predict it is identified and quantified. The dominant effect is the change of the coverage of adsorbed catalyst with surface area during interface evolution. Experimental filling results are described and shown to be consistent with the predictions. An associated effect on surface roughness of planar deposits is also described.
Citation
Journal of Applied Physics
Volume
93 No. 2

Keywords

chemical vapor depostition, copper, CVD, superconformal, superfill

Citation

Pyo, S. , Kim, S. , Wheeler, D. , Moffat, T. and Josell, D. (2003), Seam-Free Fabrication of Sub-Micrometer Copper Interconnects by Iodine-Catalyzed Chemical Vapor Deposition, Journal of Applied Physics, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=853178 (Accessed May 21, 2024)

Issues

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Created December 31, 2002, Updated October 12, 2021