NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.
Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.
An official website of the United States government
Here’s how you know
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Ru Spacer Thickness Dependences of the Domain Nucleation and Growth in Co/Ru/Co Synthetic Antiferromagnet
Published
Author(s)
V S. Gornakov, Valerian I. Nikitenko, William F. Egelhoff Jr., Robert D. McMichael, Alexander J. Shapiro, Robert D. Shull
Abstract
The relative orientation of Co magnetization vectors in a Co/Ru/Co/Ta structure vary gradually from parallel to antiparallel orientation as a function of Ru thickness varying from 0 nm to 1.0 nm. At intermediate average Ru thicknesses from 0.2 nm to 0.35 nm, the sandwich ground states were characterized by non-collinear magnetization orientations. Real-time magneto-optical indicator film images reveal either 180 domain walls, magnetization reversal was observed to proceed incrementally with each cycle of an AC field.
Citation
Journal of Magnetism and Magnetic Materials
Volume
258
Issue
Sp.
Pub Type
Journals
Keywords
domain walls, magnetic imaging, magnetic pinholes, synthetic antiferromagnet
Citation
Gornakov, V.
, Nikitenko, V.
, Egelhoff, W.
, McMichael, R.
, Shapiro, A.
and Shull, R.
(2003),
Ru Spacer Thickness Dependences of the Domain Nucleation and Growth in Co/Ru/Co Synthetic Antiferromagnet, Journal of Magnetism and Magnetic Materials
(Accessed October 18, 2025)