Cheung, K.
, Wen, Y.
and Tsui, B.
(2025),
On the Response Time Constant of Interface Defects in Accumulation, IEEE Transactions on Device and Materials Reliability, [online], https://doi.org/10.1109/TDMR.2025.3635880, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=958872
(Accessed March 28, 2026)
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On the Response Time Constant of Interface Defects in Accumulation
Published
Author(s)
, , Bing-Yue Tsui
Abstract
Interface defect response time is a key parameter in some common electrical measurements of MOS devices, most notably the hi-lo CV measurement as well as the conductance measurement. A long established believe is that interface defects at energies close to the band edge have too short a response time to be measured properly by these techniques. This believe is preventing near band edge interface defects to be measured with confidence. Here we show that this believe is valid only in depletion. Since to measure defect level near the band edge, the capacitor is biased to accumulation, a different equation should be used and that the response time of interface defects near the band edge is constant and not too fast to be measured.Citation
IEEE Transactions on Device and Materials Reliability
Volume
26
Issue
1
Pub Type
Journals
Download Paper
Keywords
MOS, CV, band edge defects, interface defects, response time
Citation
Issues
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Created November 21, 2025, Updated March 27, 2026