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Report of VAMAS TWA 23 - Thermal Properties of Thin Films: A Round Robin to Measure the Thermal Conductivity of Silcon Dioxide Films on Silicon
Published
Author(s)
A Feldman
Abstract
A round-robin to measure the thermal conductivity (k) of SIQ^2^ thin films has taken place under the Versailles Project on Advanced Materials and Standards (VAMAS). Films with nominal thickness of 50 nm, 100 nm, 200 nm, and 500 nm, produced by oxidation of Si wafers, were distributed to the participating laboratories. Each laboratory received a separate set of specimens.
Feldman, A.
(2017),
Report of VAMAS TWA 23 - Thermal Properties of Thin Films: A Round Robin to Measure the Thermal Conductivity of Silcon Dioxide Films on Silicon, Journal of Materials Research
(Accessed October 11, 2024)