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Report of VAMAS TWA 23 - Thermal Properties of Thin Films: A Round Robin to Measure the Thermal Conductivity of Silcon Dioxide Films on Silicon

Published

Author(s)

A Feldman

Abstract

A round-robin to measure the thermal conductivity (k) of SIQ^2^ thin films has taken place under the Versailles Project on Advanced Materials and Standards (VAMAS). Films with nominal thickness of 50 nm, 100 nm, 200 nm, and 500 nm, produced by oxidation of Si wafers, were distributed to the participating laboratories. Each laboratory received a separate set of specimens.
Citation
Journal of Materials Research

Keywords

round-robin, silicon dioxide, thermal conductivity, VAMAS

Citation

Feldman, A. (2017), Report of VAMAS TWA 23 - Thermal Properties of Thin Films: A Round Robin to Measure the Thermal Conductivity of Silcon Dioxide Films on Silicon, Journal of Materials Research (Accessed March 2, 2024)
Created February 19, 2017