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Reduced microwave loss in trenched superconducting coplanar waveguides



Michael R. Vissers, Jeffrey S. Kline, Jiansong Gao, David S. Wisbey, David P. Pappas


Low loss TiN resonators were fabricated on 3" intrinsic Si substrates. By exploiting the etch rate anisotropy in a parallel plate reactive ion etch, otherwise identical coplanar waveguides with gaps of varying depth were created in the same TiN film within the same processing step. The RF loss of these resonators was then measured as a function of input power. While the high power loss was similar for all depths, the low power loss was reduced by about a factor of two for the resonators with the deepest trenches. We find that this reduction fits well to that predicted from a reduced participation of lossy surface oxides in the gap.
Applied Physics Letters


Superconducting Loss


Vissers, M. , Kline, J. , Gao, J. , Wisbey, D. and Pappas, D. (2012), Reduced microwave loss in trenched superconducting coplanar waveguides, Applied Physics Letters, [online], (Accessed June 19, 2024)


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Created February 20, 2012, Updated November 10, 2018