NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.
Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.
An official website of the United States government
Here’s how you know
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Reduced microwave loss in trenched superconducting coplanar waveguides
Published
Author(s)
Michael R. Vissers, Jeffrey S. Kline, Jiansong Gao, David S. Wisbey, David P. Pappas
Abstract
Low loss TiN resonators were fabricated on 3" intrinsic Si substrates. By exploiting the etch rate anisotropy in a parallel plate reactive ion etch, otherwise identical coplanar waveguides with gaps of varying depth were created in the same TiN film within the same processing step. The RF loss of these resonators was then measured as a function of input power. While the high power loss was similar for all depths, the low power loss was reduced by about a factor of two for the resonators with the deepest trenches. We find that this reduction fits well to that predicted from a reduced participation of lossy surface oxides in the gap.
Vissers, M.
, Kline, J.
, Gao, J.
, Wisbey, D.
and Pappas, D.
(2012),
Reduced microwave loss in trenched superconducting coplanar waveguides, Applied Physics Letters, [online], https://doi.org/10.1063/1.3683552
(Accessed October 10, 2025)