Reduced microwave loss in trenched superconducting coplanar waveguides

Published

February 20, 2012

Author(s)

Michael R. Vissers, Jeffrey S. Kline, Jiansong Gao, David S. Wisbey, David P. Pappas

Abstract

Low loss TiN resonators were fabricated on 3" intrinsic Si substrates. By exploiting the etch rate anisotropy in a parallel plate reactive ion etch, otherwise identical coplanar waveguides with gaps of varying depth were created in the same TiN film within the same processing step. The RF loss of these resonators was then measured as a function of input power. While the high power loss was similar for all depths, the low power loss was reduced by about a factor of two for the resonators with the deepest trenches. We find that this reduction fits well to that predicted from a reduced participation of lossy surface oxides in the gap.

Citation

Applied Physics Letters

Volume

100

Issue

8

Pub Type

Journals

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DOI Link

Keywords

Superconducting Loss

Citation

Vissers, M. , Kline, J. , Gao, J. , Wisbey, D. and Pappas, D. (2012), Reduced microwave loss in trenched superconducting coplanar waveguides, Applied Physics Letters, [online], https://doi.org/10.1063/1.3683552 (Accessed October 20, 2025)