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Quantitative Depth Profiling of Photoacid Generators in Photoresist Materials by Near-Edge X-Ray Absorption Fine Structure Spectroscopy

Published

Author(s)

Vivek M. Prabhu, S Sambasivan, Daniel A. Fischer, Linda K. Sundberg, Robert D. Allen

Abstract

We apply near-edge x-ray absorption fine structure (NEXAFS) spectroscopy to quantify the surface composition and depth profiling of photoacid generators in thin film photoresist materials by varying the entrance-grid bias of the photoelectron detector. By considering model compositional profiles, NEXAFS distinguishes the surface molar excess within the top 6 nm from the bulk. A surface enriched system, triphenylsulfonium perfluorooctanesulfonate, is contrasted with a perfluorobutanesulfonate photoacid generator, which displays an appreciable surface profile to the bulk within a 6 nm segregation length scale. These results, while applied to 193-nm photoresist materials, highlights a general approach to quantifying NEXAFS experimental data.
Citation
Applied Surface Science
Volume
253

Keywords

immersion lithography, lithography, photoresist, segregation, spectroscopy, thin film

Citation

Prabhu, V. , Sambasivan, S. , Fischer, D. , Sundberg, L. and Allen, R. (2006), Quantitative Depth Profiling of Photoacid Generators in Photoresist Materials by Near-Edge X-Ray Absorption Fine Structure Spectroscopy, Applied Surface Science, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=852582 (Accessed April 23, 2024)
Created May 9, 2006, Updated February 19, 2017