Prabhu, V.
, Sambasivan, S.
, Fischer, D.
, Sundberg, L.
and Allen, R.
(2006),
Quantitative Depth Profiling of Photoacid Generators in Photoresist Materials by Near-Edge X-Ray Absorption Fine Structure Spectroscopy, Applied Surface Science, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=852582
(Accessed December 10, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Quantitative Depth Profiling of Photoacid Generators in Photoresist Materials by Near-Edge X-Ray Absorption Fine Structure Spectroscopy
Published
Author(s)
, S Sambasivan, , Linda K. Sundberg, Robert D. Allen
Abstract
We apply near-edge x-ray absorption fine structure (NEXAFS) spectroscopy to quantify the surface composition and depth profiling of photoacid generators in thin film photoresist materials by varying the entrance-grid bias of the photoelectron detector. By considering model compositional profiles, NEXAFS distinguishes the surface molar excess within the top 6 nm from the bulk. A surface enriched system, triphenylsulfonium perfluorooctanesulfonate, is contrasted with a perfluorobutanesulfonate photoacid generator, which displays an appreciable surface profile to the bulk within a 6 nm segregation length scale. These results, while applied to 193-nm photoresist materials, highlights a general approach to quantifying NEXAFS experimental data.Citation
Applied Surface Science
Volume
253
Pub Type
Journals
Download Paper
Keywords
immersion lithography, lithography, photoresist, segregation, spectroscopy, thin film
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created May 9, 2006, Updated February 19, 2017