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Properties of N- and P-Channel MOSFETs with Ultrathin RTCVD Oxynitride Gate Dielectrics

Published

Author(s)

Eric M. Vogel, J. J. Wortman

Abstract

A detailed summary of the electrical properties of n-channel and p-channel MOSFETs with ultra-thin (2.0 nm to 3.0 nm) N2O annealed Rapid Thermal Chemical Vapor Deposited (RTCVD) oxynitrides and Rapid Thermal Oxides (RTO) is presented. The characterization methodologies for capacitance-voltage, effective mobility, tunneling and reliability were critically analyzed to provide meaningful comparisons of the dielectrics. The results of the characterization indicate that an ultra-thin RTCVD oxynitride with N2O anneal stops boron penetration, has comparable channel mobility and reliability and lower tunnel current as compared to RTO.
Proceedings Title
Extended Abstracts of the Electrochemical Society
Conference Dates
May 2-7, 1999
Conference Location
Seattle, WA, USA

Keywords

capacitance, mobility, MOSFET, nitrogen, oxynitride, reliability, RTCVD, tunneling

Citation

Vogel, E. and Wortman, J. (1999), Properties of N- and P-Channel MOSFETs with Ultrathin RTCVD Oxynitride Gate Dielectrics, Extended Abstracts of the Electrochemical Society, Seattle, WA, USA (Accessed May 26, 2024)

Issues

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Created September 30, 1999, Updated October 12, 2021