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Profiling of Cross-Sectional a-Si:H Solar Cells Using a Scanning Tunneling Microscope

Published

Author(s)

S Barzen, Alan Gallagher

Abstract

A scanning tunneling Microscope in ultrahigh vacuum is used to measure the profile of electronic properties of cleaved amorphous silicon solarcells. -Their exposed layers in a single and a tandem cell can be identified by their characteristic current - voltage dependencies (scanningtunneling spectroscopy). An Apparent Potential is measured throughout the cells. The results for the tandem cell from SOLAREX, Inc. are shown.
Proceedings Title
National Center for Photovolaics: NCPV Photovoltaics Program Review, Review Meeting | 15th | AIP Conference Proceedings #462 NCPV Photovoltaics Program Review: Proceedings of the 15th Conference | AIP
Volume
462
Issue
No. 1
Conference Dates
September 1, 1998
Conference Title
AIP Conference Proceedings

Keywords

cross-section amorphous silicon, potentiometrie, scanning tunneling microscope, solar cells, stm

Citation

Barzen, S. and Gallagher, A. (1999), Profiling of Cross-Sectional a-Si:H Solar Cells Using a Scanning Tunneling Microscope, National Center for Photovolaics: NCPV Photovoltaics Program Review, Review Meeting | 15th | AIP Conference Proceedings #462 NCPV Photovoltaics Program Review: Proceedings of the 15th Conference | AIP (Accessed April 14, 2024)
Created March 1, 1999, Updated February 17, 2017