Power Spectral Density Functions for Si Wafer Surfaces Using Six Measurement Techniques

Published

January 1, 2000

Author(s)

Egon Marx, I J. Malik, T Bristow, N Poduje, J C. Stover

Abstract

Power spectral densities (PSDs) were used to characterize a set of surfaces over a wide range of lateral as well as perpendicular dimensions. Twelve 200-mm-diameter Si wafers were prepared and the surface finishes ranged from as-ground wafers to epitaxial wafers. The wafer surfaces were then measured with different methods: atomic force microscopy, angle-resolved light scatter, interferometric microscopy, optical profiling, stylus profiling, and capacitance-based wafer thickness gaging. The data were converted into one-dimensional PSDs and the curves were plotted as functions of spatial frequencies, comparing results for different samples or for different instruments.

Proceedings Title

Proceedings of 2000 International Conference on Characterization and Metrology

Pub Type

Conferences

Keywords

atomic force microscope, power spectral density, profilometer, Si wafers, surface imaging, surface roughness

Citation

Marx, E. , Malik, I. , Bristow, T. , Poduje, N. and Stover, J. (2000), Power Spectral Density Functions for Si Wafer Surfaces Using Six Measurement Techniques, Proceedings of 2000 International Conference on Characterization and Metrology (Accessed October 16, 2025)