Pore Size Distributions in Low-K Dielectric Thin Films From X-Ray Porosimetry

Published

October 1, 2002

Author(s)

Hae-Jeong Lee, Christopher L. Soles, Da-Wei Liu, Barry J. Bauer, Wen-Li Wu

Abstract

X-ray reflectivity has been used to determine the mass uptake of probe molecules in porous thin films supported on thick silicon wafers. The adsorption occurs by capillary condensation when the films are exposed to probe vapor at controlled partial vapor pressures. The probe solvent partial pressure is varied by mixing saturated air and dry air at constant temperature, or by changing sample temperature at a constant vapor concentration. Pore size distribution in the films can be calculated from the probe uptake by using typical porosimetry approaches such as by the application of the Kelvin equation to convert partial pressure into pore size. For illustration, the pore size distribution of three different nanoporous thin films, the primary candidate of ultra-low k interlevel dielectrics in the next generation of IC chips, was determined using this technique. These samples represent different generations of low-k dielectrics developed by industry.

Citation

Journal of Polymer Science Part B-Polymer Physics

Volume

40

Issue

No. 19

Pub Type

Journals

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Keywords

low-key dielectric, porosimetry, porosity, porous thin film, scattering, small angle neutron, x-ray reflectivity

Citation

Lee, H. , Soles, C. , Liu, D. , Bauer, B. and Wu, W. (2002), Pore Size Distributions in Low-K Dielectric Thin Films From X-Ray Porosimetry, Journal of Polymer Science Part B-Polymer Physics, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=852050 (Accessed April 18, 2024)