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Polysilane Production in RF SiH4 and H2 - SiH4 Plasmas

Published

Author(s)

P Horvath

Abstract

Stable gases produced in SiH4 and H2-SiH4, capacitively-coupled RF discharges, operated at typical device-production conditions, were investigated by quadrupole mass spectrometry. The production of di- and trisilane, the depletion of silane and pressure change were measured during consecutive short discharges. Dissociation rate constants and branching ratios for higher-silane production are obtained from the time-dependent densities. The influence of suspended Si particles on stable-gas production is found to be negligible, by changing the duration of individual discharges and thereby the particle densities and sizes. We have also observed pyrolitic decay of disilane and trisilane at 200 C, although this is negligible under normal reactor conditions.
Proceedings Title
ICPIG | 16th | | ICPIG
Conference Dates
July 15-20, 2003
Conference Location
Greifswald, GE
Conference Title
International Conference on Phenomena in Ionized Gases

Keywords

plasma chemistry, silane particles

Citation

Horvath, P. (2003), Polysilane Production in RF SiH<sub>4</sub> and H<sub>2</sub> - SiH<sub>4</sub> Plasmas, ICPIG | 16th | | ICPIG, Greifswald, GE (Accessed April 20, 2024)
Created July 1, 2003, Updated February 17, 2017