Photon antibunching from a single lithographically defined InGaAs/GaAs quantum dot
Varun B. Verma, Martin J. Stevens, Kevin L. Silverman, Neville Dias, Akash Garg, James J. Coleman, Richard P. Mirin
We demonstrate photon antibunching from a single lithographically defined quantum dot fabricated by electron beam lithography, wet chemical etching, and overgrowth of the barrier layers by metalorganic chemical vapor deposition. Measurement of the second-order autocorrelation function indicates g(2)(0) = 0.395 ± 0.030, below the 0.5 limit necessary for classification as a single photon source.
, Stevens, M.
, Silverman, K.
, Dias, N.
, Garg, A.
, Coleman, J.
and Mirin, R.
Photon antibunching from a single lithographically defined InGaAs/GaAs quantum dot, Applied Physics Letters
(Accessed May 30, 2023)