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Photon antibunching from a single lithographically defined InGaAs/GaAs quantum dot

Published

Author(s)

Varun B. Verma, Martin J. Stevens, Kevin L. Silverman, Neville Dias, Akash Garg, James J. Coleman, Richard P. Mirin

Abstract

We demonstrate photon antibunching from a single lithographically defined quantum dot fabricated by electron beam lithography, wet chemical etching, and overgrowth of the barrier layers by metalorganic chemical vapor deposition. Measurement of the second-order autocorrelation function indicates g(2)(0) = 0.395 ± 0.030, below the 0.5 limit necessary for classification as a single photon source.
Citation
Applied Physics Letters
Volume
19

Citation

Verma, V. , Stevens, M. , Silverman, K. , Dias, N. , Garg, A. , Coleman, J. and Mirin, R. (2011), Photon antibunching from a single lithographically defined InGaAs/GaAs quantum dot, Applied Physics Letters (Accessed June 13, 2024)

Issues

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Created February 28, 2011, Updated February 19, 2017