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Phonon dephasing and population decay dynamics of the G-band of semiconducting single-wall carbon nanotubes

Published

Author(s)

Young Jong Lee, Sapun Parekh, Jeffrey Fagan, Marcus T. Cicerone

Abstract

The dephasing and population decay dynamics of optical phonons are studied for semiconducting single-wall carbon nanotubes (SWCNTs) using broadband time-resolved coherent anti-Stokes Raman scattering (TR-CARS) and time-resolved incoherent anti-Stokes Raman scattering (TR-IARS). By simply adjusting the spectral bandwidth of a continuum pulse, we are able to measure the total dephasing time, T2, and the population decay time, T1, of the G-band sequentially in the same sample. For two different SWCNT samples (bundles on glass and isolated dispersion in water), T2/2 is measured to be shorter than T1. Assuming that inhomogeneous broadening is small, the T2/2 and T1 measurements at the identical sample regions are used to determine the pure dephasing time, T2*/2. The determined pure dephasing time is faster in bundled SWCNTs than in isolated dispersion, suggesting stronger perturbation by neighboring tubes than by surfactants.
Citation
Nano Letters
Volume
82
Issue
16

Keywords

Coherent anti-Stokes Raman scattering, phonon dynamics, dephasing time, population decay, single wall carbon nanotubes

Citation

Lee, Y. , Parekh, S. , Fagan, J. and Cicerone, M. (2010), Phonon dephasing and population decay dynamics of the G-band of semiconducting single-wall carbon nanotubes, Nano Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=905809 (Accessed April 19, 2024)
Created October 18, 2010, Updated October 12, 2021