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Observation of Interface/Near Interface Defects in 4H SiC MOSFETs With a New Electrically Detected Magnetic Resonance Technique

Published

Author(s)

Jason T. Ryan, Brad Bittel, Pat Lenahan, Jody Fronheiser, Aivars Lelis

Abstract

We study 4H SiC MOSFETs with a new electrically detected magnetic resonance technique (EDMR) we call spin dependent charge pumping (SDCP). Our SDCP results demonstrate a tremendous improvement in sensitivity over other EDMR techniques. Additionally SDCP has the ability to access defects distributed over a wider energy range of the SiC bandgap.
Proceedings Title
Proceedings of the International Conference on Silicon Carbide and Related Materials
Conference Dates
September 11-16, 2011
Conference Location
Cleveland, OH
Conference Title
International Conference on Silicon Carbide and Related Materials

Citation

Ryan, J. , Bittel, B. , Lenahan, P. , Fronheiser, J. and Lelis, A. (2013), Observation of Interface/Near Interface Defects in 4H SiC MOSFETs With a New Electrically Detected Magnetic Resonance Technique, Proceedings of the International Conference on Silicon Carbide and Related Materials, Cleveland, OH (Accessed August 10, 2022)
Created January 1, 2013, Updated February 19, 2017