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PUBLICATIONS

Observation of Interface/Near Interface Defects in 4H SiC MOSFETs With a New Electrically Detected Magnetic Resonance Technique

Published

Author(s)

Jason T. Ryan, Brad Bittel, Pat Lenahan, Jody Fronheiser, Aivars Lelis

Abstract

We study 4H SiC MOSFETs with a new electrically detected magnetic resonance technique (EDMR) we call spin dependent charge pumping (SDCP). Our SDCP results demonstrate a tremendous improvement in sensitivity over other EDMR techniques. Additionally SDCP has the ability to access defects distributed over a wider energy range of the SiC bandgap.
Proceedings Title
Proceedings of the International Conference on Silicon Carbide and Related Materials
Conference Dates
September 11-16, 2011
Conference Location
Cleveland, OH
Conference Title
International Conference on Silicon Carbide and Related Materials
Pub Type
Conferences
Advanced communications, Electronics and Polymers

Citation

Ryan, J. , Bittel, B. , Lenahan, P. , Fronheiser, J. and Lelis, A. (2013), Observation of Interface/Near Interface Defects in 4H SiC MOSFETs With a New Electrically Detected Magnetic Resonance Technique, Proceedings of the International Conference on Silicon Carbide and Related Materials, Cleveland, OH (Accessed March 4, 2025)

Issues

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Created January 1, 2013, Updated February 19, 2017