Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Nondestructive Characterization of Oxygen-Ion-Implanted Silicon-On-Insulator Using Multiple-Angle Ellipsometry

Published

Author(s)

P. Dutta, G. A. Candela, Deane Chandler-Horowitz, Jay F. Marchiando, M. C. Peckerar
Citation
Applied Physics Letters
Volume
64
Issue
5

Citation

Dutta, P. , Candela, G. , Chandler-Horowitz, D. , Marchiando, J. and Peckerar, M. (1988), Nondestructive Characterization of Oxygen-Ion-Implanted Silicon-On-Insulator Using Multiple-Angle Ellipsometry, Applied Physics Letters (Accessed July 26, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created December 30, 1988, Updated October 12, 2021