A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long standing debate about the true nature of interface states.
Proceedings Title: International Symposium on VLSI Technology, Systems and Applications
Conference Dates: April 25-27, 2011
Conference Location: Hsinchu, -1
Pub Type: Conferences
interface states, Pb centers, charge pumping