Mueller matrix ellipsometry of artificial non-periodic line edge roughness in presence of finite numerical aperture

Published

April 20, 2011

Author(s)

Thomas A. Germer, Martin Foldyna, Brent Bergner

Abstract

We used azimuthally-resolved spectroscopic Mueller matrix ellipsometry to study a periodic silicon line structure with and without artificially-generated line edge roughness (LER). The unperturbed, reference grating profile was determined from multiple azimuthal configurations using a generalized ellipsometer, focusing the incident beam into a 60 µm spot. We used rigorous numerical modeling, taking into account the finite numerical aperture, introducing significant depolarization effects, and determining the profile shape using a four trapezoid model for the line profile. Data obtained from the artificially perturbed grating were then fit using the same model, and the resulting root-mean-square error (RMSE) values for both targets were compared. The comparison shows an increase in RMSE values for the perturbed grating that can be attributed to the effects of LER.

Proceedings Title

Metrology, Inspection, and Process Control for Microlithography XXV

Volume

7971

Conference Dates

February 28-March 3, 2011

Conference Location

San Jose, CA

Pub Type

Conferences

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Keywords

Finite numerical aperture, line edge roughness, Mueller matrix ellipsometry, periodic grating

Citation

Germer, T. , Foldyna, M. and Bergner, B. (2011), Mueller matrix ellipsometry of artificial non-periodic line edge roughness in presence of finite numerical aperture, Metrology, Inspection, and Process Control for Microlithography XXV, San Jose, CA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=908372 (Accessed December 5, 2024)