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Modification of Electrokinetic Behavior of CeO2 Abrasive Particles in Chemical Mechanical Polishing for Shallow Trench Isolation

Published

Author(s)

J P. Kim, J G. Yeo, U Paik, Y S. Jung, Jinkyoo Park, Vincent A. Hackley

Abstract

Ceria (CeO2) slurry stability and oxide-to nitride selectivity in the shallow trench isolation chemical mechanical polishing (STI CMP) process were manipulated with the modification of ceria surface potentials. The electrophoretic mobility of CeO2 particles is strongly dependent on suspension pH as well as ionizable acrylic polymer. With modification of surface potentials, the isoelectric point (pHiep) of ceria shifted toward acidic pH values, resulting in an increasing negative surface potential at pH values between 5 and 7. This surface modification resulted in an increase of oxide removal rate due to mutually repulsive electrostatic forces between modified CeO2 abrasive particle and SiO2 film. When modified ceria particles are dispersed at a pH near the pHiep of silicon nitride, where the surface potential of silicon nitride is minimal, the removal rate of nitride is sharply reduced and thus oxide-to-nitride selectivity is improved by a factor of roughly 1:50.
Citation
Journal of the Korean Physical Society
Volume
39
Issue
Suppl. S

Keywords

abrasive particles, ceria, chemo mechanical polishing, electrokinetics, passivation

Citation

Kim, J. , Yeo, J. , Paik, U. , Jung, Y. , Park, J. and Hackley, V. (2001), Modification of Electrokinetic Behavior of CeO<sub>2</sub> Abrasive Particles in Chemical Mechanical Polishing for Shallow Trench Isolation, Journal of the Korean Physical Society (Accessed June 13, 2024)

Issues

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Created November 30, 2001, Updated October 12, 2021