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Model Validation for Scanning Electron Microscopy

Published

Author(s)

Olga Ridzel, Wataru Yamane, Ishiaka Mansaray, John S. Villarrubia

Abstract

We are beginning projects to validate the physics models used for interpretation of electron microscopy images. In one, we will measure electron yields and energy spectra from cleaned well-characterized samples subjected to electron bombardment inside of a spherical retarding field analyzer in ultra-high vacuum. In another, we will measure the same features, lithographically patterned on free-standing Si membranes, with measurement techniques that differ in their interaction physics. A modeling project will compare measurement results with simulations using existing and new models. Good models should predict the observed yields and produce agreement among measurement techniques.
Proceedings Title
Proc. SPIE 12496, Metrology, Inspection, and Process Control XXXVII
Conference Dates
February 26-March 2, 2023
Conference Location
San Jose, CA, US
Conference Title
SPIE Advanced Lithography + Patterning

Keywords

critical dimension, electron microscopy, electron transport modeling, nanometer-scale dimensional metrology, secondary electron yield measurement, SEM, STEM

Citation

Ridzel, O. , Yamane, W. , Mansaray, I. and Villarrubia, J. (2023), Model Validation for Scanning Electron Microscopy, Proc. SPIE 12496, Metrology, Inspection, and Process Control XXXVII, San Jose, CA, US, [online], https://doi.org/10.1117/12.2661103, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=936398 (Accessed April 14, 2024)
Created April 27, 2023, Updated June 26, 2023