Microwave Dielectric Characterization of Unpatterned Thin Films Using a TE0γŅ Dielectric Resonator Technique Theory

Published

August 1, 2000

Author(s)

Richard G. Geyer, Clifford Krowne

Abstract

An axially-layered cylindrical dielectric resonator comprised of substrate and thin film is placed into a parallel plate waveguide and operated in axi-symmetric TE_0γŅ resonant mode structure for microwave dielectric thin film characterization. With this mode structure, dielectric properties in the plane of the film are tested. The presence of a tunable gap in the parallel plate waveguide allows partial electric field filling factors in the film to be maximized and dielectric thin film characterization over a tunable frequency range. Self-adjoint operator theory is used to solve the differential equations describing the z-dependent field variations and solutions are radially mode-matched. Uncertainty analyses for thin film permittivity and dielectric loss tangent are presented. Unpatterned thin film measurements with this technique may then be compared with those obtained from coplanar waveguide patterned devices.

Citation

Technical Note (NIST TN) - 1526

Report Number

1526

NIST Pub Series

Technical Note (NIST TN)

Pub Type

NIST Pubs

Keywords

resonator, microwave, permittivity, thin films

Citation

Geyer, R. and Krowne, C. (2000), Microwave Dielectric Characterization of Unpatterned Thin Films Using a TE_{0γŅ} Dielectric Resonator Technique Theory, Technical Note (NIST TN), National Institute of Standards and Technology, Gaithersburg, MD (Accessed October 17, 2025)