Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Micromagnetics Simulation of Asymmetric Pseudo-Spin Valve Dots

Published

Author(s)

N Dao, C A. Ross, F J. Castano, Michael J. Donahue, S L. Whittenburg

Abstract

We present our recent simulation results for Ni79Fe21 (5 nm)/Cu (3 nm)/Co (4nm) pseudo-spin valves. These simulations have been conducted on several different aspect ratios of rectangular dots. Distinct switches of the two magnetic layers were observed. At smaller aspect ratios, magnetization reversal proceeds through a leaf state in the soft layer and a flower state in the hard layer. For larger aspect ratios, reversal proceeds by nucleation and annihilation of a domain wall. Our simulations show a reasonable agreement with the experimental results. Differences between the experimental and simulation results are discussed.
Proceedings Title
Proceedings of the 2002 Materials Research Society Spring Meeting
Volume
731
Conference Dates
April 1-5, 2002
Conference Location
San Francisco, CA, USA
Conference Title
Materials Research Society

Keywords

magnetization reversal, micromagnetics, MRAM, spin valves

Citation

Dao, N. , Ross, C. , Castano, F. , Donahue, M. and Whittenburg, S. (2002), Micromagnetics Simulation of Asymmetric Pseudo-Spin Valve Dots, Proceedings of the 2002 Materials Research Society Spring Meeting, San Francisco, CA, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=50988 (Accessed July 20, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created December 31, 2001, Updated October 12, 2021