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Microelectronic test pattern NBS-3 for evaluating the resistivity-dopant density relationship of silicon:

Published

Author(s)

Martin G Buehler
Citation
- NBS SP 400-22
Report Number
NBS SP 400-22

Citation

Buehler, M. (1976), Microelectronic test pattern NBS-3 for evaluating the resistivity-dopant density relationship of silicon:, , National Institute of Standards and Technology, Gaithersburg, MD, [online], https://doi.org/10.6028/NBS.SP.400-22 (Accessed February 26, 2024)
Created January 1, 1976, Updated May 19, 2023