Performance metrics and test instrumentation needs for emerging high-voltage, high-speed SiC power devices are described. Unique power device and package thermal measurement test systems and parameter extraction methods are introduced, and applied to assess performance of recently developed 10-kV SiC MOSFETs and PiN diodes.
Proceedings Title: GOMAC Digest of Technical Papers
Conference Dates: April 4-7, 2005
Conference Location: Las Vegas, NV
Conference Title: GOMACTech
Pub Type: Conferences
high-voltage, measurement systems, performance metrics, power semiconductor, Silicon-carbide