A series of experiments are conducted to study the physical mechanism of reduced NBTI effects observed under pulsed bias conditions. A reduction of Vth and Ion is observed for pulse periods shorter than critical time constants that are believed to be associated with hole trapping and detrapping processes. A two time constant model is developed to explain the reduction of Vth and Ion as a function of pulse repetition frequency.
CMOS, Negative bias temperature instability, reliability, silicon dioxide
, Suehle, J.
and Berstein, J.
Mechanism of Dynamic NBTI of pMOSFETs, Proc. Integrated Reliability Workshop, Lake Tahoe, CA, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=31642
(Accessed December 8, 2023)