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Mechanism of Dynamic NBTI of pMOSFETs

Published

Author(s)

Baozhong Zhu, John S. Suehle, Joseph B. Berstein

Abstract

A series of experiments are conducted to study the physical mechanism of reduced NBTI effects observed under pulsed bias conditions. A reduction of Vth and Ion is observed for pulse periods shorter than critical time constants that are believed to be associated with hole trapping and detrapping processes. A two time constant model is developed to explain the reduction of Vth and Ion as a function of pulse repetition frequency.
Proceedings Title
Proc. Integrated Reliability Workshop
Conference Dates
October 18-21, 2004
Conference Location
Lake Tahoe, CA, USA
Conference Title
Integrated Reliability Workshop

Keywords

CMOS, Negative bias temperature instability, reliability, silicon dioxide

Citation

Zhu, B. , Suehle, J. and Berstein, J. (2004), Mechanism of Dynamic NBTI of pMOSFETs, Proc. Integrated Reliability Workshop, Lake Tahoe, CA, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=31642 (Accessed May 20, 2024)

Issues

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Created October 20, 2004, Updated October 12, 2021