Zhu, B.
, Suehle, J.
and Berstein, J.
(2004),
Mechanism of Dynamic NBTI of pMOSFETs, Proc. Integrated Reliability Workshop, Lake Tahoe, CA, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=31642
(Accessed December 9, 2024)
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Mechanism of Dynamic NBTI of pMOSFETs
Published
Author(s)
, , Joseph B. Berstein
Abstract
A series of experiments are conducted to study the physical mechanism of reduced NBTI effects observed under pulsed bias conditions. A reduction of Vth and Ion is observed for pulse periods shorter than critical time constants that are believed to be associated with hole trapping and detrapping processes. A two time constant model is developed to explain the reduction of Vth and Ion as a function of pulse repetition frequency.Proceedings Title
Proc. Integrated Reliability Workshop
Conference Dates
October 18-21, 2004
Conference Location
Lake Tahoe, CA, USA
Conference Title
Integrated Reliability Workshop
Pub Type
Conferences
Download Paper
Keywords
CMOS, Negative bias temperature instability, reliability, silicon dioxide
Citation
Issues
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Created October 20, 2004, Updated October 12, 2021