Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Low-Electron-Energy Cathodoluminescence Study of Polishing and Etching Effects on the Optical Properties of Bulk Single-Crystal Gallium Nitride

Published

Author(s)

Lawrence H. Robins, B W. Steiner, Norman A. Sanford, C Menoni

Abstract

Low electron energy cathodoluminescence (LEECL) was used to examine polishing-induced damage in a bulk high-pressure grown GaN single-crystal platelet. The Ga-polarity face of the platelet was mechanically polished; chemically-assisted ion-beam etching (CAIBE) to a depth of 200 nm was performed on a portion of this face. Low-temperature (15 K) CL spectra of the polished-only and polished+CAIBE regions of the Ga-face were taken at 2.8 kV, 5.4 kV, and 10.6 kV (corresponding to average electron penetration depths of 19 nm, 56 nm, and 170 nm). The low-temperature CL spectrum of the unpolished, N-polarity face was taken at 10.6 kV. In the near-band-edge region, all the CL spectra from the Ga-polarity face show a narrow peak near 3.47 eV, ascribed to donor-bound exciton recombination, and several overlapping peaks at lower energy (3.1 eV to 3.4 eV), ascribed to defect-related levels or to donor-acceptor pair recombination. Functional curve-fitting analysis enabled deconvolution of the spectra into the sum of an asymmetric peak (the donor-bound exciton) and several symmetric Gaussian peaks (the lower energy, defect-related or donor-acceptor peaks). The linewidth of the donor-bound exciton peak decreased with increasing penetration depth, and also decreased on going from the polished-only to the polished+CAIBE region. The relative intensity of a defect-related peak at {nearly equal to} 3.325 eV showed a similar decreasing trend with increasing penetration depth or with CAIBE treatment.
Proceedings Title
GaN and Related Alloys | | Symposium L: GaN and Related Alloys--2002 | Materials Research Society
Conference Dates
December 2-6, 2002
Conference Title
Materials Research Society Symposium Proceedings

Keywords

cathodoluminescence, damage, electron microscopy, gallium nitride, high-pressure crystal growth, ion-beam etching, polishing, scanning

Citation

Robins, L. , Steiner, B. , Sanford, N. and Menoni, C. (2003), Low-Electron-Energy Cathodoluminescence Study of Polishing and Etching Effects on the Optical Properties of Bulk Single-Crystal Gallium Nitride, GaN and Related Alloys | | Symposium L: GaN and Related Alloys--2002 | Materials Research Society (Accessed February 23, 2024)
Created May 1, 2003, Updated February 19, 2017