This paper presents test system developed for long-term stability characterization of 10 kV Silicon Carbide (SiC) power MOSFETs and SiC diodes under 20 kHz hard switching conditions. The system is designed to operate a single power switch and a single power diode for continuous or burst switching conditions up to 5 kV and 5 A. The test system includes a 4.5 kV to 5 kV boost converter to emulate a 22.5-kW hard switching power converter. An additional DC-DC converter is used to recover the power processed by the boost converter. The design criteria, simulation, and construction of the test system are discussed in this paper and the system operation is demonstrated using various high voltage devices including 10 kV SiC MOSFETs and PiN diodes.
Proceedings Title: The Applied Power Electronics Conference and Exposition
Conference Dates: February 25-March 1, 2007
Conference Location: Anaheim, CA
Pub Type: Conferences
Reliability test system, silicon carbide, high-voltage, high-frequency, power devices