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Lattice Position of Si in GaAs Determined by X-Ray Standing Wave Measurements

Published

Author(s)

A Shih, P L. Cowan, S H. Southworth, L Fotiadas, C Hor, B A. Karlin, F Moore, E Dobisz, H Dietrich
Citation
Journal of Applied Physics
Volume
73

Citation

Shih, A. , Cowan, P. , Southworth, S. , Fotiadas, L. , Hor, C. , Karlin, B. , Moore, F. , Dobisz, E. and Dietrich, H. (1993), Lattice Position of Si in GaAs Determined by X-Ray Standing Wave Measurements, Journal of Applied Physics (Accessed June 18, 2024)

Issues

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Created December 31, 1992, Updated October 12, 2021