Laser-Pulse Technique for Measuring the Thermal Boundary Resistance of a Dielectric-Semiconductor Interface
Erik K. Hobbie, A S. DeReggi
We describe a technique for simultaneously measuring the bulk and interfacial thermal transport coefficients of semiconductor supported dielectric films. Following a 100 ns pulse from a Q-switched ruby laser, the thermal diffusivity of the dielectric is obtained from the early-time electrothermal response, and the thermal boundary resistance of the dielectric-semiconductor interface is then obtained from the late-time decay of the signal. Data for a polyimide film spin coated on a p-doped Si substrate is presented. The technique requires independent measurement of the electrode thermal mass and the specific heat of the dielectric material.