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Laser-Pulse Technique for Measuring the Thermal Boundary Resistance of a Dielectric-Semiconductor Interface

Published

Author(s)

Erik K. Hobbie, A S. DeReggi

Abstract

We describe a technique for simultaneously measuring the bulk and interfacial thermal transport coefficients of semiconductor supported dielectric films. Following a 100 ns pulse from a Q-switched ruby laser, the thermal diffusivity of the dielectric is obtained from the early-time electrothermal response, and the thermal boundary resistance of the dielectric-semiconductor interface is then obtained from the late-time decay of the signal. Data for a polyimide film spin coated on a p-doped Si[111] substrate is presented. The technique requires independent measurement of the electrode thermal mass and the specific heat of the dielectric material.
Citation
Journal of Applied Physics

Keywords

dielectric, thermal boundary resistance, thermal diffusivity

Citation

Hobbie, E. and DeReggi, A. (2008), Laser-Pulse Technique for Measuring the Thermal Boundary Resistance of a Dielectric-Semiconductor Interface, Journal of Applied Physics (Accessed May 26, 2024)

Issues

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Created October 16, 2008