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Kinematic Theory of BEEM Spectroscopy of Silicon-Silicide Interfaces

Published

Author(s)

Mark D. Stiles, D Hamann

Abstract

The electronic structure of the materials being measured has a strong effect on the spectroscopy of the interface between them measured by ballistic electron emission microscopy (BEEM). Specific calculations for CoSi2/Si(111) and NiSi2/Si(111) based on the calculation band structures of the materials illustrate some of the observable effects due to band structures, particularly of the overlayer. The BEEM spectra for CoSi2/Si(111) show a delayed onset due to a mismatch of the states near the conduction band minimum in the Si. The spectra for NiSi2/Si(111) show structure due to a decrease in the density of states in the NiSi2 at approximately 1.8 eV above the Fermi level
Citation
Journal of Vacuum Science and Technology B
Volume
9
Issue
4

Citation

Stiles, M. and Hamann, D. (1991), Kinematic Theory of BEEM Spectroscopy of Silicon-Silicide Interfaces, Journal of Vacuum Science and Technology B (Accessed July 22, 2024)

Issues

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Created January 1, 1991, Updated February 19, 2017