Stiles, M.
and Hamann, D.
(1991),
Kinematic Theory of BEEM Spectroscopy of Silicon-Silicide Interfaces, Journal of Vacuum Science and Technology B
(Accessed April 20, 2024)
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Kinematic Theory of BEEM Spectroscopy of Silicon-Silicide Interfaces
Published
Author(s)
, D Hamann
Abstract
The electronic structure of the materials being measured has a strong effect on the spectroscopy of the interface between them measured by ballistic electron emission microscopy (BEEM). Specific calculations for CoSi2/Si(111) and NiSi2/Si(111) based on the calculation band structures of the materials illustrate some of the observable effects due to band structures, particularly of the overlayer. The BEEM spectra for CoSi2/Si(111) show a delayed onset due to a mismatch of the states near the conduction band minimum in the Si. The spectra for NiSi2/Si(111) show structure due to a decrease in the density of states in the NiSi2 at approximately 1.8 eV above the Fermi levelCitation
Journal of Vacuum Science and Technology B
Volume
9
Issue
4
Pub Type
Journals
Citation
Created January 1, 1991, Updated February 19, 2017