Scanning tunneling microscopy (STM) and atomic force microscopy operating in air have been used to investigate locations of molecular-beam epitaxially grown GaAs multiple pn junctions cleaved and passivated with P(2)S(5). Symmetrically and asymmetrically doped junctions were prepared within topographically delineated AlAs/GaAs marker regions for this in-air study of electronic junction contrast. Our results indicate that the STM-delineated junction locations do not coincide with the electrical junction locations, but rather shift into the p-type regions.
Citation: Journal Vacuum Science Technology B
Pub Type: Journals