Improved Uniformity in Glass TSV Filling by Asymmetric Dwell Pulsed Potential Deposition

Published

April 1, 2026

Author(s)

Eunsoo Shim, Youjung Kim, Ji Young Park, Mathew Weimer, Sara Harris, David Raciti, Bongyoung Yoo, Jae-Hong Lim, Yong-Ho Chao, Thomas Moffat, Daniel Josell

Abstract

Filling of through vias in glass interposers is explored using an acid copper sulfate electrolyte containing dilute chloride and a polyether suppressor additive. Cyclic voltammetry with a rotating disk electrode shows that suppression breakdown and hysteresis is associated with an S-shaped negative differential resistance (S-NDR). Feature filling experiments at potentials within the hysteretic potential range yield localized deposition that initiates and advances from the center of the through vias to enable void-free Cu filling. Challenges with filling uniformity across the interposer workpiece are addressed using an asymmetric pulsed potential approach to periodically reinforce active growth on the most recessed surface regions. The pulse and deposition potentials are selected based on voltammetry and the S-NDR filling mechanism while accounting for distributed ohmic losses due to uncompensated electrolyte and contact resistances.

Citation

The journal of the electrochemical society

Volume

173

Pub Type

Journals

Download Paper

https://doi.org/10.1149/ 1945-7111/ae53bb

Local Download

Keywords

copper, superfill, interconnect, interposer

Citation

Shim, E. , Kim, Y. , Park, J. , Weimer, M. , Harris, S. , Raciti, D. , Yoo, B. , Lim, J. , Chao, Y. , Moffat, T. and Josell, D. (2026), Improved Uniformity in Glass TSV Filling by Asymmetric Dwell Pulsed Potential Deposition, The journal of the electrochemical society, [online], https://doi.org/10.1149/ 1945-7111/ae53bb, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=961474 (Accessed April 17, 2026)