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The Impact of Long-term Memory Effects on Diode Power Probes

Published

Author(s)

Catherine A. Remley, Hugo Gomes, Alejandro Testera, Nuno B. Carvalho, Monica Barciela

Abstract

This paper presents an analysis of long term memory effects on power measurements using diode power probes. It will be shown that a power probe calibrated with a single-tone sinusoidal excitation can provide erroneous values when used with modulated signals. This fact is ascribed to the low-frequency response imposed by the power probe baseband circuit. This hypothesis is first theoretically demonstrated by use of Volterra Series, and then validated by simulations and measurements using a diode power probe.
Proceedings Title
2010 IEEE MTT-S International Microwave Symposium Digest
Conference Dates
June 7-11, 2010
Conference Location
Anaheim, CA

Keywords

Diode Power Probe, Long-term Memory Effects, Nonlinear Device, Power Measurement

Citation

Remley, C. , Gomes, H. , Testera, A. , Carvalho, N. and Barciela, M. (2010), The Impact of Long-term Memory Effects on Diode Power Probes, 2010 IEEE MTT-S International Microwave Symposium Digest, Anaheim, CA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=904611 (Accessed June 17, 2024)

Issues

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Created May 15, 2010, Updated February 19, 2017