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Imaging of semiconductor surface impurities by femtosecond near-field photoconductivity

Published

Author(s)

W Schade, D L. Osborn, J Preusser, S R. Leone

Abstract

Femtosecond pump-probe near-field photoconductivity is used to investigate the time response of surface impurities on a GaAsP diffusion type photodiode. At the defects, recovery times of less than 100 fs are obtained.
Citation
International Quantum Electronics Conference

Keywords

femtosecond laser spectroscopy, near-field photoconductivity, semiconductors

Citation

Schade, W. , Osborn, D. , Preusser, J. and Leone, S. (1998), Imaging of semiconductor surface impurities by femtosecond near-field photoconductivity, International Quantum Electronics Conference (Accessed June 25, 2024)

Issues

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Created April 30, 1998, Updated October 12, 2021