Schade, W.
, Osborn, D.
, Preusser, J.
and Leone, S.
(1998),
Imaging of semiconductor surface impurities by femtosecond near-field photoconductivity, International Quantum Electronics Conference (Accessed May 16, 2026)
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Imaging of semiconductor surface impurities by femtosecond near-field photoconductivity
Published
Author(s)
W Schade, D L. Osborn, J Preusser,
Abstract
Femtosecond pump-probe near-field photoconductivity is used to investigate the time response of surface impurities on a GaAsP diffusion type photodiode. At the defects, recovery times of less than 100 fs are obtained.Citation
International Quantum Electronics Conference
Pub Type
Journals
Keywords
femtosecond laser spectroscopy, near-field photoconductivity, semiconductors
Citation
Issues
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Created April 30, 1998, Updated October 12, 2021