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Higher-Eigenmode Piezoresponse Force Microscopy: A Path Towards Increased Sensitivity and the Elimination of Electrostatic Artifacts
Published
Author(s)
Gordon A. MacDonald, Frank W. DelRio, Jason Killgore
Abstract
Piezoelectric force microscopy and related bias induced strain sensing measurements provide unprecedented characterization of material-functionality at the nanoscale. However, the techniques are subject to considerable undesirable artifacts that conflate the desired strain signal. Here, we show that the higher-order contact resonance eigenmodes can be readily excited, with benefits towards absolute sensitivity enhancement, electrostatic artifact reduction, and lateral versus normal strain decoupling. The approach can significantly improve the proportion of signal arising from strain in status-quo measurements, as well as measurements enabling cantilevers up to 1000x softer than typically used.
MacDonald, G.
, DelRio, F.
and Killgore, J.
(2018),
Higher-Eigenmode Piezoresponse Force Microscopy: A Path Towards Increased Sensitivity and the Elimination of Electrostatic Artifacts, Nano Futures, [online], https://doi.org/10.1088/2399-1984/aab2bc, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=924677
(Accessed October 9, 2025)