High-Resolution DNA Binding Kinetics Measurements with Double Gate FD-SOI Transistors

Published

January 23, 2023

Author(s)

Seulki Cho, Alexander Zaslavsky, Curt A. Richter, Jacob Majikes, James Alexander Liddle, François Andrieu, Sylvain Barraud, Arvind Balijepalli

Abstract

Double gate fully depleted SOI transistors operating in a remote gate configuration and under closed-loop feedback allow noise performance that exceeds their single gate counterparts by more than an order of magnitude. We leverage this high performance to measure DNA hybridization in real-time, extracting quantitative association rates that scale with analyte concentration. Our low noise measurements allow a limit of detection (LOD) of 100 fM using a sensor chip attached to reusable readout circuitry. Finally, we demonstrate the devices can be operated at high ionic strengths allowing flexibility in assay design for a modest tradeoff in LOD.

Proceedings Title

Proceedings of the IEEE Electron Device Meeting

Conference Dates

December 3-7, 2022

Conference Location

San Francisco, CA, US

Conference Title

IEEE Electron Device Meeting

Pub Type

Conferences

Download Paper

https://doi.org/10.1109/IEDM45625.2022.10019493

Local Download

Keywords

FD-SOI, DNA hybridization, pH sensing

Citation

Cho, S. , Zaslavsky, A. , Richter, C. , Majikes, J. , Liddle, J. , Andrieu, F. , Barraud, S. and Balijepalli, A. (2023), High-Resolution DNA Binding Kinetics Measurements with Double Gate FD-SOI Transistors, Proceedings of the IEEE Electron Device Meeting, San Francisco, CA, US, [online], https://doi.org/10.1109/IEDM45625.2022.10019493, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=935166 (Accessed October 9, 2025)