Spiral inductors that are fabricated through a CMOS process, are micromachined by using a new post-processing procedure. In this new technique, the inductors are supported mechanically prior to etching with a low-loss host superstrate, and the silicon substrate is selectively etched from the backside. A scalably physical model for such inductors is developed. The results from the model are in good agreement with the measurements. Significant performance improvements are achieved without compromising the mechanical robustness of the fully integrated inductors. By using a 1.2 micro υ CMOS technology, quality factor of 10.5 is measured at 4.6 GHz for 8.9 nH inductor.
Proc., 1999 IEEE International Symposium on Circuits and Systems
Orlando, FL, USA
CMOS, inductors, micromachining, post-processing
, Zaghloul, M.
and Gaitan, M.
High Q Backside Micromachined CMOS Inductors, Proc., 1999 IEEE International Symposium on Circuits and Systems, Orlando, FL, USA
(Accessed November 28, 2023)