Ozgur, M.
, Zaghloul, M.
and Gaitan, M.
(1999),
High Q Backside Micromachined CMOS Inductors, Proc., 1999 IEEE International Symposium on Circuits and Systems, Orlando, FL, USA
(Accessed April 3, 2025)
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High Q Backside Micromachined CMOS Inductors
Published
Author(s)
, ,
Abstract
Spiral inductors that are fabricated through a CMOS process, are micromachined by using a new post-processing procedure. In this new technique, the inductors are supported mechanically prior to etching with a low-loss host superstrate, and the silicon substrate is selectively etched from the backside. A scalably physical model for such inductors is developed. The results from the model are in good agreement with the measurements. Significant performance improvements are achieved without compromising the mechanical robustness of the fully integrated inductors. By using a 1.2 micro υ CMOS technology, quality factor of 10.5 is measured at 4.6 GHz for 8.9 nH inductor.Proceedings Title
Proc., 1999 IEEE International Symposium on Circuits and Systems
Conference Location
Orlando, FL, USA
Pub Type
Conferences
Keywords
CMOS, inductors, micromachining, post-processing
Citation
Issues
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Created July 31, 1999, Updated October 12, 2021