Huang, X.
, Black, D.
, Macrander, A.
, Maj, J.
, Chen, Y.
and Dudley, M.
(2007),
High-geometrical-resolution imaging of dislocations in SiC using monochromatic synchrotron topography, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=854392
(Accessed May 21, 2024)
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High-geometrical-resolution imaging of dislocations in SiC using monochromatic synchrotron topography
Published
Author(s)
X R. Huang, , A T. Macrander, J Maj, Yi Chen, M Dudley
Citation
Applied Physics Letters
Volume
91
Issue
23
Pub Type
Journals
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Citation
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If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created December 2, 2007, Updated October 12, 2021