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High-geometrical-resolution imaging of dislocations in SiC using monochromatic synchrotron topography

Published

Author(s)

X R. Huang, David R. Black, A T. Macrander, J Maj, Yi Chen, M Dudley
Citation
Applied Physics Letters
Volume
91
Issue
23

Citation

Huang, X. , Black, D. , Macrander, A. , Maj, J. , Chen, Y. and Dudley, M. (2007), High-geometrical-resolution imaging of dislocations in SiC using monochromatic synchrotron topography, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=854392 (Accessed May 17, 2024)

Issues

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Created December 2, 2007, Updated October 12, 2021