High Frequency Loss Mechanism in Polymers Filled With Dielectric Modifiers

Published

November 1, 2003

Author(s)

Jan Obrzut, A Anopchenko, K Kano, Haonan Wang

Abstract

We analyzed the high frequency dielectric relaxation mechanism in high-k composite materials using film substrates made of low loss organic resin filled with ferrolectric ceramics and with single wall carbon nanotubes (SWNT). The highest frequencey relaxation process dominates the overall loss characteristic. In the case of poymers modified with SWNTs, we observed that 2% of p-doped semi-conducting SWNTs increases the dielectric constant by 3 orders of magnitude, in apparent violation of the mixing-rule. The hybrid material appears to have preferential coupling within the dispersed phase. The experimental data and numberical simulation indicate that these materials can play a significant role as embedded passive devices with functional characteristic superior to that of discrete components.

Proceedings Title

Materials, Integration and Packaging Issues for High-Frequency Devices, Symposium B| | Materials, Integration and Packaging Issues for High-Frequency Devices|Materials Research Society

Volume

783

Conference Dates

October 1, 2003

Conference Location

Undefined

Conference Title

Materials Research Society Symposium Proceedings

Pub Type

Conferences

Download Paper

Local Download

Keywords

dielectric composites, electromagnetic simulation, high frequency measurements, organic electronic materials

Citation

Obrzut, J. , Anopchenko, A. , Kano, K. and Wang, H. (2003), High Frequency Loss Mechanism in Polymers Filled With Dielectric Modifiers, Materials, Integration and Packaging Issues for High-Frequency Devices, Symposium B| | Materials, Integration and Packaging Issues for High-Frequency Devices|Materials Research Society, Undefined, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=852273 (Accessed December 15, 2024)