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High Frequency Loss Mechanism in Polymers Filled With Dielectric Modifiers

Published

Author(s)

Jan Obrzut, A Anopchenko, K Kano, Haonan Wang

Abstract

We analyzed the high frequency dielectric relaxation mechanism in high-k composite materials using film substrates made of low loss organic resin filled with ferrolectric ceramics and with single wall carbon nanotubes (SWNT). The highest frequencey relaxation process dominates the overall loss characteristic. In the case of poymers modified with SWNTs, we observed that 2% of p-doped semi-conducting SWNTs increases the dielectric constant by 3 orders of magnitude, in apparent violation of the mixing-rule. The hybrid material appears to have preferential coupling within the dispersed phase. The experimental data and numberical simulation indicate that these materials can play a significant role as embedded passive devices with functional characteristic superior to that of discrete components.
Proceedings Title
Materials, Integration and Packaging Issues for High-Frequency Devices, Symposium B| | Materials, Integration and Packaging Issues for High-Frequency Devices|Materials Research Society
Volume
783
Conference Dates
October 1, 2003
Conference Location
Undefined
Conference Title
Materials Research Society Symposium Proceedings

Keywords

dielectric composites, electromagnetic simulation, high frequency measurements, organic electronic materials

Citation

Obrzut, J. , Anopchenko, A. , Kano, K. and Wang, H. (2003), High Frequency Loss Mechanism in Polymers Filled With Dielectric Modifiers, Materials, Integration and Packaging Issues for High-Frequency Devices, Symposium B| | Materials, Integration and Packaging Issues for High-Frequency Devices|Materials Research Society, Undefined, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=852273 (Accessed February 28, 2024)
Created October 31, 2003, Updated October 12, 2021