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High Frequency Characterization of Contact Resistance and Conductivity of Platinum Nanowires*



Kichul Kim, Paul Rice, Thomas M. Wallis, Dazhen Gu, SangHyun S. Lim, Atif A. Imtiaz, Pavel Kabos, Dejan Filipovic


Abstract— Individual platinum (Pt) nanowires (NWs) with 100 nm and 250 nm diameters, embedded in coplanar waveguide (CPW) structures are investigated. Three approaches for characterization of their contact resistance and conductivity at high frequencies are demonstrated. Full-wave and circuit modeling are used to aid the systematic analysis and application of two-port broadband metrology. In the first approach, - computational models are fitted to measurements to determine only the ranges for contact resistance and conductivity. The second approach is based on transmission line theory and it is shown that the transmission line model has limited applicability for highly resistive materials. The third approach is based on a lumped element model. It overcomes the limitations of the transmission line model and produces accurate results for Pt NWs and Au bridge structures. When the lumped element physics-based model is fit to measurements of several sets of Pt NWs, one obtains contact resistance of about 50 and conductivity of 0.013 times the bulk conductivity of Pt. The proposed metrology is extendable to any metallic nanowire.
IEEE Transactions on Microwave Theory and Techniques


Conductivity, contact resistance, high frequency characterization, and platinum nanowires


Kim, K. , Rice, P. , Wallis, T. , Gu, D. , Lim, S. , Imtiaz, A. , Kabos, P. and Filipovic, D. (2011), High Frequency Characterization of Contact Resistance and Conductivity of Platinum Nanowires*, IEEE Transactions on Microwave Theory and Techniques (Accessed June 20, 2024)


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Created October 1, 2011, Updated January 27, 2020