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Growth and Applications of Single-Nanowire GaN Light Emitting Diodes

Published

Author(s)

Kristine A. Bertness

Abstract

We discuss two applications of single-nanowire GaN light emitting diodes, optical interconnects and multifunction scanning probes. These applications take advantage of the native morphology of nanowires and the high mechanical strength of GaN.
Proceedings Title
IEEE Summer Topicals 2013: Nanowire Materials and Integrated Photonics (NWIP)
Conference Dates
July 14-16, 2014
Conference Location
Montreal

Keywords

GaN nanowire, scanning probe microscopy, molecular beam epitaxy

Citation

Bertness, K. (2014), Growth and Applications of Single-Nanowire GaN Light Emitting Diodes, IEEE Summer Topicals 2013: Nanowire Materials and Integrated Photonics (NWIP), Montreal, -1 (Accessed July 19, 2024)

Issues

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Created March 19, 2014, Updated February 19, 2017