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Growth and Applications of Single-Nanowire GaN Light Emitting Diodes
Published
Author(s)
Kristine A. Bertness
Abstract
We discuss two applications of single-nanowire GaN light emitting diodes, optical interconnects and multifunction scanning probes. These applications take advantage of the native morphology of nanowires and the high mechanical strength of GaN.
Proceedings Title
IEEE Summer Topicals 2013: Nanowire Materials and Integrated Photonics (NWIP)
Conference Dates
July 14-16, 2014
Conference Location
Montreal
Pub Type
Conferences
Keywords
GaN nanowire, scanning probe microscopy, molecular beam epitaxy
Citation
Bertness, K.
(2014),
Growth and Applications of Single-Nanowire GaN Light Emitting Diodes, IEEE Summer Topicals 2013: Nanowire Materials and Integrated Photonics (NWIP), Montreal, -1
(Accessed October 11, 2025)