Bertness, K.
(2014),
Growth and Applications of Single-Nanowire GaN Light Emitting Diodes, IEEE Summer Topicals 2013: Nanowire Materials and Integrated Photonics (NWIP), Montreal, -1
(Accessed December 15, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Growth and Applications of Single-Nanowire GaN Light Emitting Diodes
Published
Author(s)
Abstract
We discuss two applications of single-nanowire GaN light emitting diodes, optical interconnects and multifunction scanning probes. These applications take advantage of the native morphology of nanowires and the high mechanical strength of GaN.Proceedings Title
IEEE Summer Topicals 2013: Nanowire Materials and Integrated Photonics (NWIP)
Conference Dates
July 14-16, 2014
Conference Location
Montreal
Pub Type
Conferences
Keywords
GaN nanowire, scanning probe microscopy, molecular beam epitaxy
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created March 19, 2014, Updated February 19, 2017