Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3 -and- Tutorials in Nanotechnology: Dielectrics in Nanosystems

Published

April 21, 2011

Author(s)

Alamgir Karim, Veena Misra, G. Srinivasan, Yaw S. Obeng, S De Gendt

Abstract

This issue of ECS Transactions will cover the following topics in (a) Graphene Material Properties, Preparation, Synthesis and Growth; (b) Metrology and Characterization of Graphene; (c) Graphene Devices and Integration; (d) Graphene Transport and mobility enhancement; (e) Thermal Behavior of Graphene and Graphene Based Devices; (f) Ge & III-V devices for CMOS mobility enhancement; (g) III.V Heterostructures on Si substrates; (h) Nano-wires devices and modeling; (i) Simulation of devices based on Ge, III-V, nano-wires and Graphene; (j) Nanotechnology applications in information technology, biotechnology and renewable energy (k) Beyond CMOS device structures and properties of semiconductor nano-devices such as nanowires; (l) Nanosystem fabrication and processing; (m) nanostructures in chemical and biological sensing system for healthcare and security; and (n) Characterization of nanosystems; (f) Nanosystem modeling.

Citation

Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3 -and- Tutorials in Nanotechnology: Dielectrics in Nanosystems

Publisher Info

Electrochemical Society, Pennington, NJ

Pub Type

Books

Citation

Karim, A. , Misra, V. , Srinivasan, G. , Obeng, Y. and De Gendt, S. (2011), Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3 -and- Tutorials in Nanotechnology: Dielectrics in Nanosystems, Electrochemical Society, Pennington, NJ (Accessed October 11, 2025)